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Principal Thin Films Engineer

Taichung, TXG, TW

Micron’s vision is to transform how the world uses information to enrich life for all.  Join an inclusive team focused on one thing: using our expertise in the relentless pursuit of innovation for customers and partners. The solutions we create help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can spark the very innovation we are pursuing. 

 

Req. ID: 238022 

 

As part of Micron’s Technology Development (TD) organization, you will work in an industry-leading, state of the art semiconductor facility for next generation memory and CMOS technology development. As a Thin Film Process Development Engineer, you will join an existing team of engineers responsible for developing and characterizing novel process solutions for advanced CMOS (Complementary Metal Oxide Semiconductor) technology. You will be responsible for engaging with internal teams including process development, process integration, device and reliability engineering, equipment development, pilot manufacturing as well as external equipment and chemical suppliers to develop and integrate robust equipment and process technologies. Encouraged to work independently and with teams to develop new thin films process solutions and optimize them to meet device requirements.

Responsibilities include, but not limited to:

  • Develop, characterize and optimize thin film processes to meet future technology requirements
  • Identify and strategize key thin film challenges for next generation advanced CMOS and DRAM technologies
  • Understand the interactions between process and hardware and be able to demonstrate this knowledge
  • Plan and execute effective, well-designed experiments and write clear concise detailed reports
  • Evaluate and make insightful inferences from large amounts of various types of data, such as physical and electrical analysis
  • Be an ambitious teammate and be adaptable to Micron’s changing needs
  • Collaborate with a team of world-class technologists in generating patents and intellectual property
  • Apply a high degree of motivation, goal orientation, and possess the ability to focus on solving problems collaboratively with the team and individually

Minimum Qualifications:

  • Industry experience in advanced (<32nm) logic device technologies, with work emphasis on Metal Gate Work Function engineering, High-k deposition and Epitaxial SiGe deposition
  • Working knowledge of advanced CMOS device physics and reliability mechanisms
  • Excellent understanding of materials engineering and science fundamentals
  • In-depth knowledge of at least one discipline- chemical engineering, chemistry, or material science
  • Excellent communication and teamwork skills and a strong attention to detail
  • In depth knowledge of chemical reaction engineering, thermodynamics, heat and mass transfer, plasma science and their direct application to thin film processes in various deposition and treatment methods
  • Expertise in thin film processes and tool variables affecting the physical, chemical and electrical properties of deposited films
  • Experience in a variety of thin film deposition techniques, particularly ALD, PECVD, PE-ALD and LPCVD
  • Experience with and understanding of surface analysis techniques like XPS, AFM, XRD, AES, EBSD, SIMS etc.
  • Deep understanding of various thin film electrical evaluation methods and techniques such as leakage, impedance, capacitance
  • Excellent interpersonal, data collection and analysis skill

Education/Experience:

  • M.S. or PhD in Chemical Engineering, Materials Science, Electrical Engineering, Physics, Chemistry or related discipline is required
  • 7-10 years of hands on experience in development of semiconductor thin film deposition

 

About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions. Through our global brands – Micron® and Crucial® – our broad portfolio of high-performance memory and storage technologies, including DRAM, NAND, 3D XPoint™ memory and NOR, is transforming how the world uses information to enrich life. Backed by more than 40 years of technology leadership, our memory and storage solutions enable disruptive trends, including artificial intelligence, 5G, machine learning and autonomous vehicles, in key market segments like mobile, data center, client, consumer, industrial, graphics, automotive, and networking. Our common stock is traded on the Nasdaq under the MU symbol. To learn more visit micron.com/careers

 

According to the "Employment Service Act", positions with salary lower than NTD$40,000, please refer to the salary information in the job description. Positions with salary over than NTD$40,000 will be subject to be discussed during interview.

 

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

 

Micron prohibits the use of child labor and complies with all applicable laws, rules, regulations and other international and industry labor standards.

 

Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.

 

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or by completing our General Contact Form


Keywords:  Taichung || Taichung City (TW-TXG) || Taiwan (TW) || Technology Development || Experienced || Regular || Engineering || #LI-AB1; #LI-AB2; #LI-AC1; #LI-AH1; #LI-AI1; #LI-AI2; #LI-AK1; #LI-AL1; #LI-AM2; #LI-AS1; #LI-AT2; #LI-AZ1; #LI-BD1; #LI-BG1; #LI-BS1; #LI-CC1; #LI-CC2; #LI-CY1; #LI-CZ1; #LI-DC1; #LI-DG1; #LI-DM1; #LI-DZ1; #LI-EA1; #LI-EH1; #LI-ES1; #LI-GC1; #LI-GKV1; #LI-HM1; #LI-HN1; #LI-IC1; #LI-IL1; #LI-INHYD1; #LI-IT1; #LI-JA1; #LI-JC1; #LI-JC2; #LI-JC4; #LI-JD1; #LI-JF1; #LI-JH1; #LI-JJ1; #LI-JP2; #LI-JS1; #LI-JT1; #LI-JT2; #LI-KB1; #LI-KD1; #LI-KL1; #LI-KP1; #LI-KT1; #LI-KV1; #LI-LG1; #LI-LP1; #LI-LT1; #LI-LY1; #LI-MC1; #LI-MC2; #LI-MG1; #LI-MH2; #LI-MK1; #LI-ML1; #LI-MO1; #LI-MP2; #LI-MP3; #LI-MR2; #LI-MR3; #LI-MS1; #LI-MS2; #LI-MT1; #LI-MW1; #LI-NB2; #LI-NH1; #LI-OL1; #LI-PARVEZ; #LI-PB1; #LI-RJ1; #LI-RL1; #LI-RR1; #LI-RS1; #LI-SB1; #LI-SC1; #LI-SC2; #LI-SING; #LI-SK1; #LI-SK2; #LI-SR1; #LI-SR2; #LI-SR3; #LI-SS2; #LI-ST1; #LI-ST2; #LI-ST3; #LI-TY1; #LI-VM1; #LI-YC1; #LI-YL1; #LI-YL2; #LI-YM1; #LI-德孔1; Not Applicable || Tier 5 || 

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