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NTI-SG Diffusion Process Intern

Singapore, 03, SG

Micron’s vision is to transform how the world uses information to enrich life for all.  Join an inclusive team focused on one thing: using our expertise in the relentless pursuit of innovation for customers and partners. The solutions we create help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can spark the very innovation we are pursuing. 


Req. ID: 260624 


Diffusion Characterization & Process Development Intern

In Micron's NAND Technology Integration (NTI) Singapore department, our mission is to define and develop high quality NAND technology nodes and deliver to HVM with industry best cost and performance. NTI-SG is looking for local university intern to support R&D activities associated with rapid deployment of technology nodes, the process margin improvement work necessitated thereof as well as to ensure extended engagement with manufacturing on the upcoming technology nodes.


  • Along with the Diffusion Development team, you will design and optimize diffusion (film) processes for Micron's leading-edge memory.
  • You will take ideas from conception through process development then implementation in our production facilities.
  • Your primary areas of responsibility include executing design of experiments, analyzing data through critical dimension measurements, electron microscopy (SEM, TEM), or other methods of characterizing films. In addition, electrical characterization of cell films such as I-V, corona probe testing, MOSCAP etc.
  • Post data analysis, you are required to suggest innovations and improvements in diffusion schemes to meet structural and electrical criteria for Micron’s products.
  • Self-motivated and adaptable to Micron’s fast paced, demanding and dynamic work environment; flexibility to work for extended hours, as required.
  • Excellent oral and written skills with ability to convey the message clearly and sharply both locally and globally.
  • Deeply logical approach towards problem solving.
  • Excellent ability to prioritize and lead multiple projects at a time; deftly utilize available resources or seek peers’ and/or management help to get over the roadblocks to work towards solutions.
  • Encourage and enforce safe, compliant behavior through periodic communications and the performance management process.


Opportunity to get along with groups such as process integration, electrical failure analysis, yield improvement, manufacturing, and equipment vendors to ensure robust diffusion processes that meet the precise physical and electrical requirements for Micron products.


Project Details:

Channel is one of the most critical processes in replacement gate (RG) 3D NAND technology which determines the device performance. The key focus for channel development projects will be focusing on delivering high string current. In 2D NAND, the channel is connected through Si-wafer with single crystal of Si. However, in 3D NAND, channel is formed vertically, and single crystal Si is no longer favorable. Deposited Si channel will result multiple defects such as grain boundaries, dislocation defect etc. As a diffusion engineer, the expectation of the project involves selection of Si precursor, process optimization and introduction of new scheme for channel engineering. This project involves extensive lab scale characterization ranges from microscopic to macroscopic and lastly on electrical validation. Common characterizations for channel include TEM, SEM, I-V, Hall mobility etc. Another key challenge for channel will be on variation improvement which covers wafer-to-wafer, wafer-in-wafer, step coverage.


Primary scope of the project would be to include executing design of experiments, analyzing data through both blanket characterization and device characterization and basic understanding on wafer fabrication operating system.



Minimum Qualifications:

  • Pursuing a Bachelors degree in Engineering or Science with an expected graduation date of December 2021 or later.
  • Looking for a semester long internship.
  • Basic understanding of semiconductor manufacturing.
  • Ability to learn quickly in a rapidly changing environment.
  • Excellent organizational, analytical skills and attention to details.
  • This position requires that you have an aptitude for a research and development environment.
  • Good organization/MS Office skills.
  • Ability to work independently or in a team environment.
  • Superb communication skills.
  • Fundamental device physic will be added advantage for this position.



About Micron Technology, Inc.

We are an industry leader in innovative memory and storage solutions. Through our global brands – Micron® and Crucial® – our broad portfolio of high-performance memory and storage technologies, including DRAM, NAND, 3D XPoint™ memory and NOR, is transforming how the world uses information to enrich life. Backed by more than 40 years of technology leadership, our memory and storage solutions enable disruptive trends, including artificial intelligence, 5G, machine learning and autonomous vehicles, in key market segments like mobile, data center, client, consumer, industrial, graphics, automotive, and networking. Our common stock is traded on the Nasdaq under the MU symbol. To learn more visit


All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.


Micron prohibits the use of child labor and complies with all applicable laws, rules, regulations and other international and industry labor standards.


Micron does not charge candidates any recruitment fees or unlawfully collect any other payment from candidates as consideration for their employment with Micron.


For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or by completing our General Contact Form

Keywords:  Singapore || North West (SG-03) || Singapore (SG) || Technology Development || Intern || Internship || Engineering || #LI-IT1 || Tier 1 || 

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