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2020 Intern - NVE PE

Singapore, 01, SG


Req. ID: 141422 



Title: 3D NAND Memory Test Screen Development and Wafer Level Analysis


Description: Study and design/optimize test screen/methodology for Micron’s leading 3D NAND memory to meet customer specification with effectiveness (min. detectable DPM) and efficiency (test cost) in advanced technology and test environment. In this project, students will have the hands-on opportunity to get in touch with state-of-art in-house tools and gain 1st hand experience working on real silicon wafers to perform device characterization and electrical failure analysis (EFA).


Scope: During the internship, the intern will have hands-on experience working with the engineers to define and improve testing methods to address product issues on devices manufactured at Micron’s R&D facility, run Verilog (Digital) and Analog design simulations, perform device characterization and electrical failure analysis (EFA) to solve technical problems using lab tools and techniques, optimize testing conditions and methodologies to improve manufacturing test yields and test time, utilize in-house advanced tools for engineering data analysis for validation and risk assessment.


Deliverable: Develop or optimize Best Known Method for test screen to contribute towards qualification of Micron’s next generation 3D NAND memory products.



All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or by completing our General Contact Form

Keywords:  Singapore || Central Singapore (SG-01) || Singapore (SG) || NVE (Non-Volatile Engineering Group) || Intern || Internship || Manufacturing/Production Operations || #LI-IT1 || Tier 1 || 

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