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R&D Senior Reliability Manager/Engineer

Higashi Hiroshima, 34, JP

 

Req. ID: 198643 

 

As a Reliability Device Engineer at Micron, you will be responsible for taking reliability of Technology Dvelopment’s (TD) products in Micron Memory Japan(MMJ). In this position, you will be performing device reliability characterization   detailed process and device design using advanced TCAD tools and responsible for semiconductor process & device modeling for Micron's next-generation memory technologies. You will be working closely with process integration engineers to design experiments based on modeling and existing experimental results, where applicable. You will also interact with a variety of teams including process integration, characterization, and circuit design and product engineers to analyze and debug device and circuit-related issues during process development.

 

Your responsibilities and tasks will include, but not limited to:

üManage MMJ TD Reliability team, testability and capacity.
üResponsible for cross-team communication for productivity.
üResponsible for reliability modeling creation through making a consensus with related teams.
üTrack actions, schedules, and owners to maintain cycle time and deliveries on progress.
üManage RSPEC and lead Quality first culture.
üPerform data analysis of reliability tests results  for TD products. Keep watching outside new reliability topics
üManage and coordinate various inputs from various stakeholders in Quality Reliability
üCollaborate with US, Boise TD Reliability team, Circuit Design team, Product Engineering team Product Reliability team and various
   stakeholders - reliability evaluations/trials/plans
üCollaborate with wafer/package quality and reliability team for wafer/package-related reliability evaluations/trials/plans
Guide, Consultation and Training
üCommunicate Globally with DRAM, NAND, Emerging Memory for knowledge sharing.
üProvide training to engineers and technicians within and outside of the group
üMaintain knowledge base (lessons learned) within the group.
üStay abreast of Quality and Reliability issues of Micron DRAM and other memory products.
üProvide consultation for audits, RMA, and customer issues
Education:
üRequired: Masters’ Degree in Electrical / Electronics/ Computer Engineering/ Circuit design
Qualifications
üKnowledge of fundamental memory processes and a basic understanding of probe and parametric functions
üGood understanding of semiconductor device physics will be an advantage
üKnowledge of DRAM and/or 2D & 3D NAND or other memory product in device physics, reliability & endurance statistics.
üKnowledge of various managed DRAM and/or NAND protocol standards. (Preferrd)
üGood verbal and written communication skills. Strong data collection skills preferred
üExcellent multi-tasking skills with excellent project/time management and priority setting skills
Working Location: Hiroshima, Japan 
 
About Us
As the leader in innovative memory solutions, Micron is helping the world make sense of data by delivering technology that is
transforming how the world uses information. Through our global brands — Micron, Crucial and Ballistix — we offer the industry’s
broadest portfolio. We are the only company manufacturing today’s major memory and storage technologies: DRAM, NAND, NOR and
3D XPoint™ memory. Our solutions are purpose built to leverage the value of data to unlock financial insights, accelerate scientific
breakthroughs and enhance communication around the world.

 

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or by completing our General Contact Form


Keywords:  Higashi Hiroshima || Hiroshima (JP-34) || Japan (JP) || Technology Development || Experienced || Regular || Engineering || #LI-MO1 || Tier 5 || 

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