Share this Job

Probe Engineer 1

Apply now »

Date: Feb 11, 2019

Location: Higashi Hiroshima, 34, JP

Company: Micron


Req. ID: 131021 

Probe Engineering

As a Technology Development (TD) Probe Engineer at Micron Technology in Hiroshima Japan, you will be involved in developing Micron’s newest DRAM memory technologies.  Your work will include writing test programs, developing new test methodologies, and analyzing electrical test data to expedite TD’s cycles of learning.  You will work closely with the Process Integration, Product Engineering, and Yield Enhancement teams to ensure proper test coverage for new DRAM technologies and then help facilitate transfer into high volume manufacturing.


 Your responsibilities may include, but are not limited to:

  • Design new test programs for 1st silicon validation of new product/technology
  • Optimize test programs by applying more efficient testing methods to reduce test times and manufacturing costs
  • Automate test processes by writing software to improve work efficiency
  • Develop tools to help provide better analysis and insight from the large volumes of data
  • Develop new Design For Test (DFT) and Design For Manufacturability (DFM) capabilities
  • Work with internal and external suppliers to develop and qualify new test solutions
  • Collaborate with other engineering departments to improve overall product yield, performance, and reliability


Probe Engineering is a multi-disciplinary field, requiring knowledge of semiconductor operation, computer architecture, computer programming, and statistics.  A successful candidate will be interested in hardware, software, and statistics, and can expect to be involved in all three areas, daily.  Since Probe engineering works with many other departments, a candidate should also be highly motivated with solid communication skills and reporting abilities who is eager to engage in cross functional teams for problem solving.

Successful candidates for this position will have:

  • Electronics/Electrical circuit knowledge:
    • As applied in memory devices and to test equipment
    • Knowledge of digital systems and logic gates
    • Knowledge of transistor operation
  • Basic understanding of semiconductor device physics
  • Intermediate to advanced computer programming and program-debug skills
    • C++ being the ideal area of expertise
  • The ability to work with minimal supervision
  • Able to participate in cross functional problem-solving teams
  • Excellent technical communication skills
  • The ability to prioritize multiple tasks while meeting project deadlines

Additional skills that are desired, but not required include:

  • Basic Unix/Linux command familiarity
  • Python / Perl familiarity or experience
  • A good understanding of statistics
  • Basic understanding of DRAM memory manufacturing
  • DRAM semiconductor device knowledge
  • Automated test equipment (ATE) experience

Required Education:

Bachelor's or Master’s degree in Electrical Engineering, Computer Engineering, or a related discipline. PhD degree with relevant experience will also be considered.

We recruit, hire, train, promote, discipline and provide other conditions of employment without regard to a person's race, color, religion, sex, age, national origin, disability, sexual orientation, gender identity and expression, pregnancy, veteran’s status, or other classifications protected under law.  This includes providing reasonable accommodation for team members' disabilities or religious beliefs and practices.

Each manager, supervisor and team member is responsible for carrying out this policy. The EEO Administrator in Human Resources is responsible for administration of this policy. The administrator will monitor compliance and is available to answer any questions on EEO matters.

To request assistance with the application process, please contact Micron’s Human Resources Department at 1-800-336-8918 (or 208-368-4748).

Keywords:  Higashi Hiroshima || Hiroshima (JP-34) || Japan (JP) || Technology Development || Experienced || Regular || Engineering || #LI-AD1; #LI-AH1; #LI-AW1; #LI-A朱1; #LI-CC1; #LI-CC2; #LI-CY1; #LI-DG1; #LI-DK1; #LI-EY1; #LI-FF1; #LI-IT1; #LI-JC1; #LI-JC2; #LI-JF1; #LI-JS1; #LI-JT1; #LI-KD1; #LI-KL1; #LI-KV1; #LI-LA1; #LI-LC1; #LI-LP1; #LI-LT1; #LI-LY1; #LI-MC1; #LI-MH1; #LI-MH2; #LI-MH3; #LI-MO1; #LI-MP1; #LI-MT1; #LI-MW1; #LI-NH1; #LI-OL1; #LI-PC1; #LI-RL1; #LI-RS1; #LI-RV1; #LI-SING�; #LI-SS1; #LI-ST1; #LI-VL1; #LI-YL1; #LI-德孔1; #LI-毓马1; #LI-淯鐘1; Not Applicable ||

Job Segment: Semiconductor, Manufacturing Engineer, Electronics Engineer, Engineer, Electrical, Science, Engineering