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Emerging Memory Cell Engineer

Boise, ID, US


Req. ID: 264661 

Micron Technology’s vision is to transform how the world uses information to enrich life and our commitment to people, innovation, tenacity, collaboration, and customer focus allows us to fulfill our mission to be a global leader in memory and storage solutions. This means conducting business with integrity, accountability, and professionalism while supporting our global community.


As a Process Integration Engineer working in the R&D Emerging Memory Technology Group at Micron, you will be working in an industry leading 300mm R&D facility on technology which enables future memory scaling. You will focus on the performance and manufacturability of Memory Technology. Areas of concentration will include Integration and Circuit issues specific to memories such as PCM, RRAM, STT, Nanotube, 3D, Crosspoint, FBC, etc.

In addition to a broad basis of Process Integration knowledge, you have device physics expertise and will contribute to the development of Emerging Memory specific devices. You have a deep understanding of Semiconductor Device Physics including CMOS, bipolar, diodes, etc. You interact significantly with simulation, modeling, characterization, and reliability groups.


Responsibilities include, but not limited to:

  • Design and manage experiments run in the R&D Fab.
  • Use creative problem solving focused on optimizing process flows which enable future memory chip integration.
  • Evaluate in-line, probe, parametric, and back end data.
  • As an integral part of R&D, you will engage with numerous multi-functional teams including Process Development, Product Engineering, Design, Yield Enhancement, Advanced Mask, Probe, etc. to arrive at solutions to yield and margin issues.



  • You have a thorough knowledge of mainstream memory technologies such as DRAM, NAND, NOR, & SRAM acquired through significant industry experience.
  • Expertise in device physics.
  • You understand the challenges and opportunities facing alternative memory technologies is expected.
  • You are very familiar with both Process Integration & Circuit/Architecture issues as they relate to memory.
  • You are proficient with data analysis, DOE, and statistical techniques.
  • You can demonstrate success in a multi-tasking team environment which requires excellent communication, organizational, and team building skills.



  • MS or PhD in Electrical Engineering, Physics, or other related technical field is required.


About Us

As the leader in innovative memory solutions, Micron is helping the world make sense of data by delivering technology that is transforming how the world uses information. Through our global brands — Micron, Crucial and Ballistix — we offer the industry’s broadest portfolio. We are the only company manufacturing today’s major memory and storage technologies: DRAM, NAND, NOR and 3D XPoint™ memory. Our solutions are purpose built to leverage the value of data to unlock financial insights, accelerate scientific breakthroughs and enhance communication around the world.


Micron Benefits

Employee Rewards Program, Healthcare, Paid time off (Combined Sick and Vacation Time), Retirement savings plans, Paid maternity/paternity leave, Employee Assistance Program, Professional development training, Workplace wellness programs, Micron Health Clinic (Boise only), Fitness Center / Activity rooms (Boise only), Tuition Reimbursement, Micron Corporate Discounts, Casual Dress attire.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.

For US Sites Only: To request assistance with the application process and/or for reasonable accommodations, please contact Micron’s Human Resources Department at 1-800-336-8918 or 208-368-4748 and/or submit: Job Information Request Form to:

Keywords:  Boise || Idaho (US-ID) || United States (US) || Technology Development || College || Regular || Engineering || #LI-ML1 ||

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