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R&D NAND Cell Array Device Engineer

Date: Feb 12, 2018

Location: Boise, ID, US

Company: Micron


Req. ID: 97241 

As an R&D NAND Cell Device and Array Engineer in the Process and Device Technology Development group at Micron Technology Inc., you will be responsible for analyzing improving the cell device characteristics and optimizing array operation for the next generation innovative NAND technologies in order to meet the required cell and array performance within project timelines.


Your responsibilities will include, but are not limited to:

  • Contribute to the process and device technology development of state of the art NAND cell, in particular by providing expertise in NAND Cell device physics and NAND array operation
  • Characterize NAND cell arrays and test structures
  • Contribute to the Cell Failure Mode and Effect Analysis (FMEA) effort. In particular, perform Electrical Failure Analysis (EFA) on both arrays and test structures.
  • Defining and understanding of device requirements for NAND cell. In particular, contributing to the definition and validation of the Cell Electrical Specifications (ESPEC)
  • Contributing to the optimization and improvement of the Read Window Budget (RWB): understand trims, propose and test features, contribute to the development of new features in collaboration with PE and Design teams
  • Contributing to the cell improvement effort (performance, reliability) by providing feedback to the Process Integration and Cell Engineers on process experiments and possible interactions with array operation
  • Driving cross-functional teams to address device/array deficiencies.
  • Supporting the qualification and transfer of the technology as needed
  • Updating team and management as to the status of the projects.



Successful candidates for this position will have:

  • The knowledge of and experience with nonvolatile memories.
  • The coding skills to characterize and model cell / array properties. Typical platforms/languages used: JMP, MATLAB, PERL, PYTHON
  • A strong understanding of statistics.
  • A strong understanding of semiconductor devices and processes.
  • A strong understanding of NAND memory operation
  • Solid communication and reporting abilities.
  • The ability to be highly skilled at driving for results.  





PhD or MS/BS in electrical engineering or 5 years experience required. 

We recruit, hire, train, promote, discipline and provide other conditions of employment without regard to a person's race, color, religion, sex, age, national origin, disability, sexual orientation, gender identity and expression, pregnancy, veteran’s status, or other classifications protected under law.  This includes providing reasonable accommodation for team members' disabilities or religious beliefs and practices.

Each manager, supervisor and team member is responsible for carrying out this policy. The EEO Administrator in Human Resources is responsible for administration of this policy. The administrator will monitor compliance and is available to answer any questions on EEO matters.

To request assistance with the application process, please contact Micron’s Human Resources Department at 1-800-336-8918 (or 208-368-4748).

Keywords:  Boise || Idaho (US-ID) || United States (US) || Technology Development || Experienced || Regular || Engineering || #LI-DK1 ||

Nearest Major Market: Boise
Nearest Secondary Market: Meridian

Job Segment: Semiconductor, R&D Engineer, Electrical, Engineer, Electrical Engineering, Science, Engineering